0.4 +0.1 -0.1 2.9 +0.1 -0.1 0.95 +0.1 -0.1 1.9 +0.1 -0.1 2 . 4 + 0 . 1 - 0 . 1 1 . 3 + 0 . 1 - 0 . 1 0 - 0 . 1 0 . 3 8 + 0 . 1 - 0 . 1 0 . 9 7 + 0 . 1 - 0 . 1 0 . 5 5 0 . 4 1 2 3 unit: mm sot-23 0.1 +0.05 -0.01 1 base 2 emitter 3 collector 2sb 852 features darlington c onnection f or high dc current gain. b uilt-in 4k resis tor betwe en base and em itt er. absolute maxim um ratings t a = 25 paramet er sym bol rating unit collector-base volt age v cbo -40 v collector-em itt er voltage v ceo -32 v em itt er-base voltage v ebo -6 v collector curr ent -continuo us i c -300 m a collector pow er dissipati on( tot al ) p c 200 m w junct ion tem pera ture t j 150 storage tem pera ture t stg -55 to 150 ele ctr ical characteristics t a = 25 paramet er sym bol test conditions min typ ma x unit collector-to-b ase breakdow n voltage v (br)cbo ic = -100a, i e =0 -40 v collector-to-e m itt er bre akdow n voltage v (br)ceo ic = -1 m a i b =0 -32 v em itt er-to- base breakdow n voltage v (br)ebo i e = -100 a i c =0 -6 v collector cut off current ic bo v cb = -24 v , i e =0 -1 a collector cut off current i ebo v ce = -4.5v , i c =0 -1 a dc curre nt gain h fe v ce = -5v, i c = -100ma 5000 collector-emit ter sat uration vo ltage v ce(sat) i c =-20 0 m a, i b = -0.4m a -1.5 v transition frequency f t v ce = -5v, i c = -10ma ,f=100mh z 200 mh z output c apacitance c ob v cb =-10 v, i e =0a, f =1m hz 3 pf mark ing mar king u * r be 4k ? c b e product specification sales@twtysemi.com 1 of 2 http://www.twtysemi.com 4008-318-123
t y placl cha racter istics 0 2 5 5 0 7 5 100 125 150 ambient temperature : ta ( c) fig.1 power dissipation curves 0 25 50 75 100 125 power dissipation : p c /p cmax (%) ? 0.4 ? 0.8 ? 1.2 ? 1.6 ? 2.0 ? 2.4 base to emitter voltage : v be (v) fig.2 ground emitter propagation characteristisc 0 ? 2 ? 5 ? 10 ? 20 ? 50 ? 100 ? 200 ? 500 collector current : i c (ma) v ce = ? 6v ta = 100 c ta = 25 c ta = ? 55 c 0 ? 1 ? 20 ? 40 ? 60 ? 80 ? 100 ? 2 ? 3 ? 4 ? 5 collector to emitter voltage : v ce (v) fig.3 ground emitter output characteristics 0 collector current : i c (ma) ta=25 c i b =0 ? 2 a ? 3 a ? 4 a ? 5 a ? 6 a ? 7 a ? 8 a ? 9 a ? 10 a ? 2 ? 5 ? 10 ? 20 ? 50 ? 100 ? 200 ? 500 ? 1000 ? 2000 100000 20000 10000 2000 1000 200 100 500 5000 50000 collector current : i c (ma) fig.4 dc current gain vs. collector current ( ) dc current gain : h fe ta=25 c v ce = ? 3v ? 5v ? 5 ? 10 ? 20 ? 50 ? 100 ? 200 ? 500 ? 1000 ? 2000 20000 10000 2000 1000 500 5000 50000 collector current : i c (ma) fig.5 dc current gain vs. collector current ( ? ) dc current gain : h fe v ce = ? 5v ta=100 c 25 c ? 55 c ? 5 ? 10 ? 20 ? 50 ? 100 ? 200 ? 500 ? 1000 ? 0.1 ? 0.2 ? 0.5 ? 1 ? 2 ? 5 ? 10 ? 20 collector current : i c (ma) fig.6 collector-emitter saturation voltage vs. collector current dc current gain : h fe i c /i b =500 ta= ? 55 c 100 c 25 c 1 2 5 1 0 2 0 5 0 100 200 50 100 200 500 1000 2000 5000 10000 emitter current : i e (ma) fig.7 gain bandwidth product vs. emitter current transision frequwncy : f t (mhz) v ce = ? 5v ta=25 c ? 1 ? 2 ? 5 ? 10 ? 20 ? 50 1 2 5 10 20 50 100 collector to base voltage : v cb (v) fig.8 collector output capacitance vs. collector-base voltage output capacitance : cob (pf) f=1mhz i e =0a ta=25 c ? 1 ? 2 ? 5 ? 10 1 2 5 10 20 emitter to base voltage : v eb (v) fig.9 emitter input capacitance vs. emitter-base voltage emitter input capacitance : cib (pf) f=1mhz i e =0a ta=25 c 2sb 852 product specification sales@twtysemi.com 2 of 2 http://www.twtysemi.com 4008-318-123
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